Silicon wafer dedicated oxygen analysis device 'O836Si'
Introducing a high-precision oxygen analysis device that adopts a non-dispersive infrared detection method!
The "O836Si" is an oxygen analysis device specifically designed for silicon wafers, developed to meet the demand for low concentration and high precision oxygen analysis in the silicon industry. It enables accurate and high-precision oxygen analysis through the combination of a highly precise non-dispersive infrared detector, the latest sample loading system, and a programmable impulse furnace. Additionally, it adopts a Windows-based system, achieving high operability. 【Features】 ■ High-precision solid-state infrared detector for low concentrations ■ Low system blank and loading head design for wafer measurement ■ Measurement results can also be displayed in ppma ■ Windows-based operating system ■ Capable of analyzing metals such as silicon wafers and steel *For more details, please feel free to contact us.
- Company：LECOジャパン
- Price：Other
